2SK3205_06 TOSHIBA [Toshiba Semiconductor], 2SK3205_06 Datasheet - Page 2
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2SK3205_06
Manufacturer Part Number
2SK3205_06
Description
Silicon N Channel MOS Type Switching Regulator Applications DC−DC Converter, and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK3205_06.pdf
(3 pages)
Electrical Characteristics
Source−Drain Ratings and Characteristics
Gate leakage current
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Marking
K3205
Characteristics
Characteristics
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
(Ta = 25°C)
R
R
Symbol
Symbol
(BR) DSS
DS (ON)
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
t
Q
DSF
DR
t
off
oss
tr
on
rss
t
iss
rr
gs
gd
th
fs
f
g
rr
|
V
V
I
V
V
V
V
V
V
I
I
D
DR
DR
GS
DS
DS
GS
GS
DS
DS
DD
= 10 mA, V
= 5 A, V
= 5 A, V
= 150 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
≈ 120 V, V
D
GS
GS
2
D
D
D
GS
(Ta = 25°C)
= 2.5 A
GS
Test Condition
Test Condition
= 1 mA
= 2.5 A
DS
GS
= 2.5 A
GS
= 0 V
= 0 V, dI
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 10 V, I
—
—
DR
D
/ dt = 100 A / μs
= 5 A
150
Min
Min
0.8
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
0.54
0.36
Typ.
0.47
330
145
110
4.5
—
—
—
—
50
10
15
10
60
12
—
—
—
8
4
2006-11-20
2SK3205
0.75
−1.7
Max
Max
±10
100
2.0
0.5
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
Unit
Unit
μA
μA
nC
nC
pF
ns
ns
V
V
Ω
S
A
A
V