2SK3418-E RENESAS [Renesas Technology Corp], 2SK3418-E Datasheet
2SK3418-E
Related parts for 2SK3418-E
2SK3418-E Summary of contents
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... Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance R = 4.3 m typ. DS(on) Capable gate drive High speed switching Outline TO-220AB G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current ...
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... Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge ...
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... Main Characteristics Power vs. Temperature Derating 160 120 100 Case Temperature Typical Output Characteristics 100 2 Drain to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 0.4 0 0.2 0 Gate to Source Voltage Rev ...
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... Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test – Case Temperature Body-Drain Diode Reverse Recovery Time 1000 µ 500 GS 200 100 0.1 0 Reverse Drain Current Dynamic Input Characteristics ...
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... Reverse Drain Current vs. Source to Drain Voltage 100 0.4 0.8 1.2 Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ Avalanche Test Circuit V DS Monitor Rg Vin 50Ω Rev.2.00 Sep. 10, 2004 page 400 320 240 = 0, – ...
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... Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω Rev.2.00 Sep. 10, 2004 page Vout Monitor Vin R L Vout d(on) Waveform 90% 10% 10% 10% 90% 90 d(off) f ...
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... Package Dimensions 11.5 Max 10.16 ± 0.2 9.5 8.0 2.54 ± 0.5 Ordering Information Part Name 2SK3418-E 50 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep. 10, 2004 page φ 3.6 +0.1 –0.08 1.5 Max 0.76 ± ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...