2SK3418-E RENESAS [Renesas Technology Corp], 2SK3418-E Datasheet - Page 2

• Manufacturer Part Number: 2SK3418-E
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK3418
Electrical Characteristics
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
Rev.2.00 Sep. 10, 2004 page 2 of 7
1. Pulse test
Item
Symbol
V
V
R
R
Coss
(BR)DSS
Crss
Ciss
Qgs
Qgd
t
t
I
I
|y
V
GS(off)
DS(on)
DS(on)
Qg
d(on)
d(off)
DSS
GSS
t
t
t
DF
rr
fs
r
f
|
Min
1.0
60
55
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
9770
1340
Typ
470
180
320
700
380
4.3
6.0
1.0
90
32
36
53
70
—
—
—
—
Max
±0.1
2.5
5.5
9.0
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
m
m
nC
nC
pF
pF
pF
nC
ns
ns
ns
ns
ns
V
V
S
V
A
A
I
V
V
V
I
I
I
V
V
f = 1 MHz
V
V
I
V
I
R
I
I
diF / dt = 50 A / s
D
D
D
D
D
D
F
F
DS
GS
DS
DS
GS
DD
GS
GS
= 45 A
L
= 85 A, V
= 85 A, V
= 10 mA, V
= 45 A, V
= 45 A, V
= 45 A, V
= 85 A
= 0.67
= 60 V, V
= 10 V, I
= 10 V
= ±20 V, V
= 0
= 50 V
= 10 V
= 10 V
Test conditions
GS
GS
DS
GS
GS
D
GS
GS
= 10 V
=4 V
(Ta = 25°C)
= 1 mA
= 10 V
= 0
= 0
DS
= 0
= 0
= 0
Note1
Note1
Note1
Note1