2SK3430-Z NEC [NEC], 2SK3430-Z Datasheet - Page 2

• Manufacturer Part Number: 2SK3430-Z
• Description: SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
• Manufacturer: NEC [NEC]

ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
2
Drain to Source On-state Resistance
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain Leakage Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
PG.
= 20
CHARACTERISTICS
PG.
0 V
I
G
V
= 2 mA
50
R
DD
G
D.U.T.
= 25
I
D
50
I
AS
D.U.T.
BV
DSS
Starting T
R
V
DD
L
V
DS
L
V
DD
SYMBOL
ch
R
R
V
Preliminary Data Sheet D14599EJ1V0DS00
V
| y
t
t
DS(on)1
DS(on)2
I
C
Q
Q
I
C
C
GS(off)
A
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
t
t
t
oss
rss
GS
GD
rr
fs
iss
r
f
G
rr
= 25 °C)
|
V
V
V
V
V
V
V
I
R
I
I
I
di/dt = 100 A/ s
V
0
D
D
F
F
GS
GS
DS
DS
DS
GS
DS
G
GS
Duty Cycle
= 40 A, V
= 80 A , V
= 80 A, V
= 80 A, V
= 10
= 1 s
= 10 V, I
= 10 V, I
= 40 V, V
= 10 V, V
= 10 V, I
= 4 V, I
= ±20 V, V
TEST CIRCUIT 2 SWITCHING TIME
PG.
TEST CONDITIONS
D
GS
GS
GS(on)
DD
D
D
D
= 40 A
GS
GS
= 1 mA
= 40 A
= 0 V
= 0 V,
= 40 A
1 %
DS
= 32 V, V
= 0 V, f = 1 MHz
= 0 V
= 10 V, V
R
= 0 V
G
D.U.T.
GS
DD
= 10 V
= 20 V,
R
V
DD
L
V
Wave Form
I
Wave Form
D
GS
MIN.
1.5
20
V
I
D
GS
0
0
10 %
TYP.
2800
1800
t
10.5
10 %
730
320
110
170
350
d(on)
5.9
2.0
1.0
40
50
10
14
50
77
t
on
90 %
t
MAX.
r
7.3
2.5
15
10
10
V
I
D
t
GS(on)
d(off)
2SK3430
t
UNIT
off
90 %
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
90 %
V
S
V
t
10 %
A
A
f