2SC5108FT_07 TOSHIBA [Toshiba Semiconductor], 2SC5108FT_07 Datasheet
2SC5108FT_07
Manufacturer Part Number
2SC5108FT_07
Description
Silicon NPN Epitaxial Planar Type For VCO Application
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC5108FT_07.pdf
(2 pages)
For VCO Application
Absolute Maximum Ratings
Electrical Characteristics
Marking
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Output capacitance
Reverse transfer capacitance
Collector-base time constant
Note 1: h
Note 2: C
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Characteristics
Characteristics
FE
re
is measured by 3 terminal method with capacitance bridge.
classification O: 80~160, Y: 120~240
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
(Ta = 25°C)
(Ta = 25°C)
2SC5108FT
⎪S
Symbol
Symbol
C
V
V
V
I
I
T
c
CBO
EBO
h
C
C
P
CBO
CEO
EBO
21e
I
I
(Note 1)
･r
T
f
stg
FE
B
C
T
ob
re
C
j
bb
⎪
2
’
V
V
V
V
V
V
V
CB
EB
CE
CE
CE
CB
CB
−55~125
Rating
= 10 V, I
= 1 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
100
125
20
10
15
30
3
1
C
C
C
C
E
C
Test Condition
E
= 0
= 0, f = 1 MHz
= 5 mA
= 5 mA
= 5 mA, f = 1 GHz
= 3 mA, f = 30 MHz
= 0
Unit
mW
mA
mA
°C
°C
V
V
V
(Note 2)
Weight: 0.0022 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
80
⎯
⎯
⎯
⎯
⎯
4
7
Typ.
0.7
0.5
5.5
11
⎯
⎯
⎯
6
2SC5108FT
2-1B1A
2007-11-01
―
―
Max
240
0.1
0.1
0.9
10
⎯
⎯
⎯
Unit: mm
GHz
Unit
μA
μA
dB
pF
pF
ps
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2SC5108FT_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type For VCO Application Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Note: Using continuously under heavy loads (e.g. the ...
Page 2
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...