2SK3439_06 TOSHIBA [Toshiba Semiconductor], 2SK3439_06 Datasheet
2SK3439_06
Related parts for 2SK3439_06
2SK3439_06 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) DC-DC Converter Applications Relay Drive and Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 µA (max) ...
Page 2
Marking Part No. (or abbreviation code) K3439 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance ...
Page 3
I – 100 Common source 25°C 8 Pulse test 2 0.2 0.4 0.6 0.8 Drain-source voltage V ( – V ...
Page 4
R – (ON) 6 Common source Pulse test −80 − Case temperature Tc (°C) Capacitance – 10000 ...
Page 5
Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 Single 0.01 0.00001 0.0001 Safe operating area 300 I D max (pulsed) * 100 μ max (continuous) 100 operation ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...