2SK3440_06 TOSHIBA [Toshiba Semiconductor], 2SK3440_06 Datasheet
2SK3440_06
Manufacturer Part Number
2SK3440_06
Description
Silicon N Channel MOS Type Switching Regulator, DC-DC Converter Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK3440_06.pdf
(6 pages)
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
•
•
•
•
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
= 50 V, T
Characteristics
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
DSS
th
= 25°C (initial), L = 350 μH, R
= 2.0 to 4.0 V (V
(Note 2)
(Note 1)
= 100 μA (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
DS
DGR
GSS
P
DSS
I
DP
AR
| = 30 S (typ.)
AS
AR
stg
D
ch
D
2SK3440
DS
= 60 V)
= 6.5 mΩ (typ.)
R
Symbol
= 10 V, I
th (ch-c)
−55 to 150
Rating
12.5
±30
200
125
644
150
D
60
60
50
50
G
1
= 1 mA)
= 25 Ω, I
Max
1.00
AR
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
= 50 A
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into the S2 pin.
Weight: 0.74 g (typ.)
JEDEC
JEITA
TOSHIBA
1
2
2-9F1B
SC-97
2006-11-17
―
2SK3440
4
3
Unit: mm
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2SK3440_06 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (V DSS ...
Page 2
Marking Part No. (or abbreviation code) K3440 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance ...
Page 3
I – 100 Common source 25°C Pulse test 5 0.2 0.4 0.6 0.8 Drain-source voltage V ( – ...
Page 4
R – (ON) 14 Common source Pulse test −80 − Case temperature Tc (°C) Capacitance – ...
Page 5
Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 10 μ 100 μ Safe operating area 500 300 I D max (pulsed) * 100 100 μ max (continuous ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...