2SK3456-S NEC [NEC], 2SK3456-S Datasheet

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2SK3456-S

Manufacturer Part Number
2SK3456-S
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC [NEC]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3456-S
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Part Number:
2SK3456-S,-ZJ
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Document No.
Date Published
Printed in Japan
DESCRIPTION
features a low gate charge and excellent switching
characteristics, designed for high voltage applications such
as switching power supply, AC adapter.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
The 2SK3456 is N-channel DMOS FET device that
Low gate charge
Q
Gate voltage rating 30 V
Low on-state resistance
R
Avalanche capability ratings
Surface mount package available
DS(on)
G
= 30 nC TYP. (V
2. Starting T
= 0.60
D14753EJ1V0DS00 (1st edition)
May 2002 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
MAX. (V
ch
DD
C
Note1
= 25°C, V
= 25°C)
= 400 V, V
Note2
Note2
GS
DS
A
C
GS
= 25°C)
= 25°C)
= 10 V, I
= 0 V)
= 0 V)
DD
GS
= 150 V, R
N-CHANNEL POWER MOS FET
1%
D
= 10 V, I
= 6.0 A)
A
= 25
G
D
DATA SHEET
= 25
= 12 A)
°C
)
V
V
I
I
P
P
T
T
I
E
SWITCHING
D(DC)
D(pulse)
AS
ch
stg
DSS
GSS
T1
T2
AS
V
MOS FIELD EFFECT TRANSISTOR
GS
= 20
ORDERING INFORMATION
55 to +150
0 V
500
100
150
103
1.5
12
30
12
36
PART NUMBER
2SK3456-ZJ
2SK3456-S
2SK3456
mJ
W
W
°C
°C
V
V
A
A
A
2SK3456
TO-220AB
PACKAGE
TO-262
TO-263
©
2000

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2SK3456-S Summary of contents

Page 1

... Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14753EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION PART NUMBER 2SK3456 2SK3456-S 2SK3456- 6 ° 500 DSS ...

Page 2

... V F(S- di/ TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1% ch Data Sheet D14753EJ1V0DS 2SK3456 MIN. TYP. MAX. UNIT 100 A 100 nA 2.5 3.5 V 2.0 S 0.48 0.60 1620 pF 250 ...

Page 3

... 0.1 0.01 150 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.5 Pulsed Pulsed 1.2 0 6.0 A 2.4 A 0.6 0.3 0 0.1 20 Data Sheet D14753EJ1V0DS 2SK3456 T = 150˚C A 125˚C 75˚C 25˚C 25˚C 50˚ Pulsed Gate to Source Voltage - Pulsed T = 50˚C A 25˚ ...

Page 4

... V = 150 rss 0.1 1000 0.1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 600 V 400 200 0 100 0 5 Data Sheet D14753EJ1V0DS 2SK3456 = Pulsed 0.5 1.0 1.5 - Source to Drain Voltage - d(off 100 I - Drain Current - 400 250 V 125 ...

Page 5

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 100 Case Temperature - ˚C C 1000 Single Pulse 10 m 100 100 PW - Pulse Width - s Data Sheet D14753EJ1V0DS 2SK3456 80 100 120 140 160 R = 83.3˚C/W th(ch- 1.25˚C/W th(ch-C) 1000 5 ...

Page 6

... 0.1 Starting T = 25˚C ch 0.01 0 Inductive Load - mH 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 120 100 Starting T - Starting Channel Temperature - ˚C ch Data Sheet D14753EJ1V0DS 2SK3456 V = 150 100 125 150 ...

Page 7

... TO-262 (MP-25 Fin Cut) 1.3±0.2 10 TYP 1.3±0.2 0.75±0.3 2.54 TYP. 2.8±0.2 1.3±0.2 EQUIVALENT CIRCUIT Gate 0.5±0.2 Data Sheet D14753EJ1V0DS 2SK3456 4.8 MAX. 1.3±0.2 2.8±0.2 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Drain Body Diode Source 7 ...

Page 8

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SK3456 The M8E 00. 4 ...

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