2SK3466_06 TOSHIBA [Toshiba Semiconductor], 2SK3466_06 Datasheet - Page 2

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2SK3466_06

Manufacturer Part Number
2SK3466_06
Description
Silicon N Channel MOS Type Chopper Regulator Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
K3466
Rise time
Turn-ON time
Fall time
Turn-OFF time
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
I
I
DSF
DRP
Q
DSF
t
rr
rr
V
V
I
V
V
V
V
V
D
V
Duty < = 1%, t
GS
DS
DS
GS
DS
DS
DD
GS
= 10 mA, V
10 V
I
I
dI
0 V
DR
DR
= 500 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±25 V, V
= 10 V, I
∼ − 400 V, V
DR
2
= 5 A, V
= 5 A, V
(Ta = 25°C)
15 Ω
/dt = 100 A/μs
Test Condition
D
D
D
w
GS
GS
Test Condition
GS
= 1 mA
= 5 A
DS
= 5 A
GS
= 10 μs
GS
GS
= 0 V
I
= 0 V, f = 1 MHz
D
= 0 V
= 0 V
= 10 V, I
= 0 V
= 0 V,
= 2.5 A
V
DD
D
R
∼ − 225 V
= 5 A
L
Output
= 90 Ω
500
Min
Min
2.0
2.5
1400
Typ.
1.35
Typ.
780
200
4.0
60
12
25
15
60
17
11
6
9
2006-11-06
2SK3466
1.50
−1.7
Max
Max
±10
100
4.0
20
5
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
S
A
A
V

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