2SA1202_07 TOSHIBA [Toshiba Semiconductor], 2SA1202_07 Datasheet - Page 3

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2SA1202_07

Manufacturer Part Number
2SA1202_07
Description
Power Amplifier Applications Voltage Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
−2000
−1000
−0.05
−0.03
−0.01
−400
−300
−200
−100
−500
−300
−100
−0.5
−0.3
−0.1
−50
−30
−10
−1
−5
−3
−1
−0.5
0
−1
0
*: Single nonrepetitive pulse
I C max (continuous)
I C max (pulse)*
−5
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
Tested without a substrate.
−1
DC
operation
−2
Collector-emitter voltage V
Collector-emitter voltage V
−3
Ta = 25°C
Collector current I
−3
Ta = 100°C
Safe Operating Area
−4
−10
100 ms*
V
−10
CE
I
C
−25
(sat) – I
25
– V
I B = −0.5 mA
−6
−30
−30
CE
−3
−2
−1
C
10 ms*
0
C
1 ms*
−8
(mA)
−100
Common emitter
I C /I B = 10
CE
−100
CE
Common emitter
Ta = 25°C
V CEO max
(V)
(V)
−10
−300
−300
−12
3
−400
−300
−200
−100
500
300
100
1.2
1.0
0.8
0.6
0.4
0.2
50
30
10
0
0
−1
0
0
Common emitter
V CE = −2 V
(1)
(2)
20
−0.2
−3
Base-emitter voltage V
Ambient temperature Ta (°C)
Collector current I
40
Ta = 100°C
−0.4
−10
60
Ta = 100°C
I
h
(1) Mounted on a ceramic
(2) No heat sink
P
C
FE
−25
C
– V
−0.6
substrate (250 mm
80
25
– Ta
– I
−30
BE
25
C
100
C
−0.8
BE
(mA)
−100
Common emitter
V CE = −2 V
120
−25
(V)
2
−1.0
× 0.8 t)
140
−300
2006-11-09
2SA1202
−1.2
160

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