2SK3466_10 TOSHIBA [Toshiba Semiconductor], 2SK3466_10 Datasheet
2SK3466_10
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2SK3466_10 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Chopper Regulator Applications • Low drain-source ON-resistance: R • High forward transfer admittance: ⎪Y • Low leakage current 100 μA (max) (V DSS • Enhancement mode ...
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Electrical Characteristics Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate ...
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I – 10, 15 Common source Tc = 25°C 4 Pulse test Drain-source voltage V DS (V) I – ...
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(ON) 5 Common source Pulse test −80 − Case temperature Tc (°C) Capacitance – 2000 1000 ...
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Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 0.01 Single pulse 0.01 0.005 0.003 10 μ 30 μ 100 μ 300 μ Safe operating area 100 max (pulsed) * 100 ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...