2SC5703_06 TOSHIBA [Toshiba Semiconductor], 2SC5703_06 Datasheet

no-image

2SC5703_06

Manufacturer Part Number
2SC5703_06
Description
Silicon NPN Epitaxial Type High-Speed Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC5703_06.pdf (5 pages)
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
•
•
•
Absolute Maximum Ratings
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
High DC current gain: h
Low collector-emitter saturation voltage: V
High-speed switching: t
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
t = 10 s
Pulse
DC
DC
f
FE
= 55 ns (typ.)
TOSHIBA Transistor Silicon NPN Epitaxial Type
= 400 to 1000 (I
(Ta = 25°C)
Symbol
V
V
V
V
T
I
P
CBO
CEO
EBO
CEX
I
CP
I
(Note 1)
T
stg
C
B
C
2SC5703
j
CE (sat)
C
= 0.5 A)
−55 to 150
Rating
= 0.12 V (max)
1250
100
400
800
150
80
50
7
4
7
1
Unit
mW
mA
°C
°C
V
V
V
V
A
Weight: 0.01 g (typ.)
JEDEC
JEITA
TOSHIBA
2
)
2-3S1A
2006-11-10
2SC5703
―
―
Unit: mm

Related parts for 2SC5703_06

Image
Part Number
Description
Manufacturer
Datasheet
Request R
2SC5703
Part Number:
2SC5703
Description:
TOSHIBA Transistor Silicon NPN Epitaxial Type
Manufacturer:
Toshiba Semiconductor
Datasheet:
2SC5703.pdf (5 pages)
TD62001APG
Part Number:
TD62001APG
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
TD62001APG.pdf (13 pages)
TD74BC541P
Part Number:
TD74BC541P
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
TD74BC541P.pdf (7 pages)
2SJ567_09
Part Number:
2SJ567_09
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ567_09.pdf (6 pages)
2SJ610_09
Part Number:
2SJ610_09
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ610_09.pdf (6 pages)
2SJ681_09
Part Number:
2SJ681_09
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ681_09.pdf (6 pages)
MG100Q2YS65H
Part Number:
MG100Q2YS65H
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS65H.pdf (6 pages)
MG300J2YS40
Part Number:
MG300J2YS40
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG300J2YS40.pdf (2 pages)
MG100Q2YS11
Part Number:
MG100Q2YS11
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS11.pdf (5 pages)
MP7003
Part Number:
MP7003
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP7003.pdf (7 pages)
MG30G6EL2
Part Number:
MG30G6EL2
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG30G6EL2.pdf (4 pages)
MP6759
Part Number:
MP6759
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP6759.pdf (5 pages)
MIG400J101H
Part Number:
MIG400J101H
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG400J101H.pdf (8 pages)
MIG30J103H
Part Number:
MIG30J103H
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG30J103H.pdf (10 pages)
MG600J2YS60A
Part Number:
MG600J2YS60A
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG600J2YS60A.pdf (9 pages)

2SC5703_06 Summary of contents

Page 1

TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain 400 to 1000 (I FE • Low collector-emitter saturation voltage: V • High-speed switching (typ.) ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time 20 μ Input I B2 ...

Page 3

I – Common emitter 25°C Single nonrepetitive pulse 0.2 0.4 Collector-emitter voltage – (sat Common emitter ...

Page 4

Safe Operating Area max (pulsed) ♦ 100 μs♦ 10 ms♦ 1 ms♦ max (continuous) 100 ms♦ s♦* DC operation* (Ta = 25°C) ♦: Single nonrepetitive pulse Ta ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

Related keywords