2SA1213_07 TOSHIBA [Toshiba Semiconductor], 2SA1213_07 Datasheet

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2SA1213_07

Manufacturer Part Number
2SA1213_07
Description
Power Amplifier Applications Power Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1213_07.pdf (5 pages)
Power Amplifier Applications
Power Switching Applications
•
•
•
•
•
Absolute Maximum Ratings
Low saturation voltage: V
High speed switching time: t
Small flat package
P
Complementary to 2SC2873
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note 1: Mounted on a ceramic substrate (250 mm
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
CE (sat)
stg
= 1.0 μs (typ.)
= −0.5 V (max) (I
(Ta = 25°C)
Symbol
V
V
V
T
P
P
CBO
CEO
EBO
I
I
(Note 1)
T
stg
C
B
C
C
2SA1213
j
2
−55 to 150
× 0.8 t)
C
Rating
1000
−0.4
−50
−50
500
150
= −1 A)
−5
−2
1
Unit
mW
°C
°C
V
V
V
A
A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
PW-MINI
2-5K1A
SC-62
2006-11-09
―
2SA1213
Unit: mm

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2SA1213_07 Summary of contents

Page 1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications • Low saturation voltage (sat) • High speed switching time: t stg • Small flat package • 1.0 to 2.0 W (mounted ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Note 3: h classification O: 70 ...

Page 3

V – −1.6 Common emitter Ta = 25°C −1 −5 mA −10 −20 −0.8 −0.4 0 −0.4 −0.8 −1.2 −1.6 0 Collector current I ( – −1.6 Common emitter ...

Page 4

I – −2.0 Common emitter −2 V −1.6 −1 100°C 25 −55 −0.8 −0.4 0 −0.4 −0.8 −1.2 −1.6 −2.0 0 Base-emitter voltage V ( – 1.2 (1) ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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