2SC5714_06 TOSHIBA [Toshiba Semiconductor], 2SC5714_06 Datasheet

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2SC5714_06

Manufacturer Part Number
2SC5714_06
Description
Silicon NPN Epitaxial Type
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC5714_06.pdf (5 pages)
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
•
•
•
Absolute Maximum Ratings
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
High DC current gain: h
Low collector-emitter saturation voltage: V
High-speed switching: t
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
t = 10 s
Pulse
DC
DC
f
FE
= 90 ns (typ.)
TOSHIBA Transistor Silicon NPN Epitaxial Type
= 400 to 1000 (I
(Ta = 25°C)
Symbol
V
V
V
V
T
I
P
CBO
CEO
EBO
CEX
I
CP
I
(Note 1)
T
stg
C
B
C
2SC5714
j
CE (sat)
C
= 0.5 A)
−55 to 150
Rating
= 0.15 V (max)
400
150
1.0
2.5
40
30
20
7
4
7
1
Unit
mA
°C
°C
W
V
V
V
V
A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
2
)
Industrial Applications
2-5K1A
SC-62
2006-11-10
2SC5714
―
Unit: mm

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2SC5714_06 Summary of contents

Page 1

TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain 400 to 1000 (I FE • Low collector-emitter saturation voltage: V • High-speed switching (typ.) ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time 20 μ Input I B2 Duty ...

Page 3

I – Common emitter Ta = 25°C Single nonrepetitive pulse 0.1 0.2 0.3 0.4 Collector-emitter voltage – (sat Common emitter I ...

Page 4

Transient Thermal Resistance r 1000 100 10 1 0.001 0.01 Safe Operating Area max (pulsed) ♦ 10 μs♦ max (continuous operation * (Ta = 25°C) ♦: Single nonrepetitive pulse Ta = 25°C 0.1 ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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