2SC5738_04 TOSHIBA [Toshiba Semiconductor], 2SC5738_04 Datasheet
2SC5738_04
Manufacturer Part Number
2SC5738_04
Description
High-Speed Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC5738_04.pdf
(5 pages)
High-Speed Switching Applications
DC-DC Converter Applications
•
•
•
Maximum Ratings
Electrical Characteristics
High DC current gain: h
Low collector-emitter saturation voltage: V
High-speed switching: t
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Switching time
645 mm
Characteristics
Characteristics
2
)
t = 10 s
(Ta = 25°C)
Storage time
Pulse
Rise time
DC
DC
f
Fall time
FE
= 90 ns (typ.)
TOSHIBA Transistor Silicon NPN Epitaxial Type
= 400 to 1000 (I
(Ta = 25°C)
Symbol
V
V
V
V
T
I
P
V
CBO
CEO
EBO
CEX
I
CP
I
T
stg
C
B
V
V
C
Symbol
j
h
h
2SC5738
(BR) CEO
(Note)
CE (sat)
BE (sat)
I
I
FE
FE
C
CBO
EBO
t
stg
CE (sat)
t
t
C
ob
r
f
(1)
(2)
= 0.5 A)
−55 to 150
= 0.15 V (max)
V
V
I
V
V
I
I
V
See Figure 1.
V
I
C
C
C
B1
Rating
1000
CB
EB
CE
CE
CB
CC
350
625
150
3.5
6.0
40
30
20
= 10 mA, I
= 1.6 A, I
= 1.6 A, I
7
1
= −I
= 40 V, I
= 7 V, I
= 2 V, I
= 2 V, I
= 10 V, I
∼ − 12 V, R
B2
Test Condition
= 53 mA
B
B
C
C
C
B
E
E
= 32 mA
= 32 mA
= 0
= 0.5 A
= 1.6 A
L
= 0
= 0
= 0, f = 1 MHz
= 7.5 Ω
Unit
mW
mA
°C
°C
V
V
V
V
A
Weight: 0.01 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
400
200
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
100
350
⎯
⎯
⎯
⎯
⎯
⎯
⎯
18
90
2-3S1A
2004-07-01
2SC5738
1000
―
―
Max
0.15
1.10
100
100
⎯
⎯
⎯
⎯
⎯
⎯
Unit: mm
Unit
nA
nA
pF
ns
V
V
V
Related parts for 2SC5738_04
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
High-Speed Switching Applications DC-DC Converter Applications
Manufacturer:
Toshiba Semiconductor
Datasheet:
Part Number:
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2SC5738_04 Summary of contents
Page 1
TOSHIBA Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications • High DC current gain 400 to 1000 (I FE • Low collector-emitter saturation voltage: V • High-speed switching (typ.) f (Ta ...
Page 2
Input Duty cycle < 1% Figure 1 Switching Time Test Circuit & Timing Chart Marking Output Lot code (year) Dot: even year No dot: odd year 2 ...
Page 3
I – Common emitter Ta = 25°C Single nonrepetitive pulse 0.1 0.2 0.3 0.4 Collector-emitter voltage V ...
Page 4
Transient Thermal Resistance r 1000 100 10 1 0.001 0.01 Safe Operating Area max (pulsed) ♦ 10 µs♦ max (continuous) 100 µs♦ 1 ms♦ 10 ms♦ 100 ms♦ s♦* DC operation * (Ta ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any ...