2SA1241_09 TOSHIBA [Toshiba Semiconductor], 2SA1241_09 Datasheet

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2SA1241_09

Manufacturer Part Number
2SA1241_09
Description
Power Amplifier Applications Power Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1241_09.pdf (5 pages)
Power Amplifier Applications
Power Switching Applications
•
•
•
Absolute Maximum Ratings
Low Collector saturation voltage: V
Excellent switching time: t
Complementary to 2SC3076
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
Ta = 25°C
Tc = 25°C
stg
= 1.0 μs (typ.)
(Ta = 25°C)
CE (sat)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
j
2SA1241
= −0.5 V (max) (I
−55 to 150
Rating
−50
−50
150
1.0
−5
−2
−1
10
1
C
= −1 A)
Unit
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B1A
2-7J1A
2009-12-21
―
―
―
―
2SA1241
Unit: mm

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2SA1241_09 Summary of contents

Page 1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: V • Excellent switching time 1.0 μs (typ.) stg • Complementary to 2SC3076 Absolute Maximum Ratings Characteristics Collector-base voltage ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Switching time Fall time Note 2: h classification O: 70 ...

Page 3

V – −1.0 Common emitter Tc = 25° −5 mA −0.8 −10 −20 −40 −80 −120 −0.6 −160 −0.4 −200 −0 −0.4 −0.8 −1.2 −1.6 −2.0 Collector current I ( ...

Page 4

I – −2.0 Common emitter −2 V −1.5 −1 100°C 25 −55 −0 −0.4 −0.8 −1.2 −1.6 Base-emitter voltage V (V) BE Safe Operating Area − max (pulsed)* ...

Page 5

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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