2SK3497_06 TOSHIBA [Toshiba Semiconductor], 2SK3497_06 Datasheet
2SK3497_06
Manufacturer Part Number
2SK3497_06
Description
Silicon N Channel MOS Type High Power Amplifier Application
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK3497_06.pdf
(3 pages)
High Power Amplifier Application
Absolute Maximum Ratings
Thermal Characteristics
High breakdown voltage: VDSS = 180V
Complementary to 2SJ618
Drain−source voltage
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
DC
Pulse (Note 1)
(Note 1)
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
V
V
T
I
T
P
GSS
DSS
I
DP
stg
D
ch
D
2SK3497
−55~150
Rating
Max
0.96
180
±12
130
150
10
30
50
1
°C / W
°C / W
Unit
Unit
°C
°C
W
V
V
A
A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
1
2-16C1B
2006-11-20
―
―
2SK3497
2
3
Unit: mm
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2SK3497_06 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) High Power Amplifier Application High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Absolute Maximum Ratings Characteristics Drain−source voltage Gate−source voltage DC (Note 1) Drain current Pulse (Note 1) Drain ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source saturation voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance This transistor is an electrostatic-sensitive device. Please handle with caution. Marking TOSHIBA ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...