2SK3497_09 TOSHIBA [Toshiba Semiconductor], 2SK3497_09 Datasheet
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2SK3497_09
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2SK3497_09 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) High Power Amplifier Application High breakdown voltage: V DSS Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage DC (Note 1) Drain current Pulse (Note 1) ...
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Electrical Characteristics Characteristics Drain cut−off current Gate leakage current Drain−source breakdown voltage Drain−source saturation voltage Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance This transistor is an electrostatic-sensitive device. Please handle with caution. Marking TOSHIBA ...
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I – 3 2 Common source Tc = 25°C Pulse test Drain-source voltage V DS ⎪Y ⎪ – 100 ...
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Safe operating area 100 I D MAX. (pulsed MAX. (continuous ms OPERATION Tc=25℃ Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...