2SK3497_09 TOSHIBA [Toshiba Semiconductor], 2SK3497_09 Datasheet

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2SK3497_09

Manufacturer Part Number
2SK3497_09
Description
High Power Amplifier Application
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK3497_09.pdf (5 pages)
High Power Amplifier Application
Maximum Ratings
Thermal Characteristics
High breakdown voltage: V
Complementary to 2SJ618
Drain−source voltage
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Pulse (Note 1)
DC (Note 1)
(Ta = 25°C)
DSS
= 180 V
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
V
V
T
I
T
P
GSS
DSS
I
DP
stg
D
ch
D
2SK3497
−55 to 150
Rating
Max
0.96
180
±12
130
150
10
30
50
1
°C / W
°C / W
Unit
Unit
°C
°C
W
V
V
A
A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
1.0
5.45 ± 0.2
2.0 ± 0.3
＋0.3
－0.25
1
1
15.9 MAX.
2
3
5.45 ± 0.2
2-16C1B
SC-65
Ф3.2 ± 0.2
2009-01-27
⎯
2SK3497
2
3
Unit: mm

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2SK3497_09 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) High Power Amplifier Application High breakdown voltage: V DSS Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage DC (Note 1) Drain current Pulse (Note 1) ...

Page 2

Electrical Characteristics Characteristics Drain cut−off current Gate leakage current Drain−source breakdown voltage Drain−source saturation voltage Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance This transistor is an electrostatic-sensitive device. Please handle with caution. Marking TOSHIBA ...

Page 3

I – 3 2 Common source Tc = 25°C Pulse test Drain-source voltage V DS ⎪Y ⎪ – 100 ...

Page 4

Safe operating area 100 I D MAX. (pulsed MAX. (continuous ms OPERATION Tc=25℃ Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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