2SA1242_07 TOSHIBA [Toshiba Semiconductor], 2SA1242_07 Datasheet
2SA1242_07
Related parts for 2SA1242_07
2SA1242_07 Summary of contents
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications • Excellent h linearity 100 to 320 (V = − ( (min) (V ...
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Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note 3: h classification O: 100 to 200, Y: 160 to 320 ...
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I – −8 −120 Common emitter −150 Tc = 25°C −100 −6 −70 −50 −4 −30 − −10 mA − −2 −4 −6 −8 Collector-emitter voltage – I ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...