2SK3498_06 TOSHIBA [Toshiba Semiconductor], 2SK3498_06 Datasheet
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2SK3498_06
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2SK3498_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) DC/DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • ...
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Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...