2SK3498_06 TOSHIBA [Toshiba Semiconductor], 2SK3498_06 Datasheet
2SK3498_06
Manufacturer Part Number
2SK3498_06
Description
Silicon N-Channel MOS Type DC/DC Converter, Relay Drive and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK3498_06.pdf
(3 pages)
DC/DC Converter, Relay Drive and Motor Drive
Applications
•
•
•
•
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
I
temperature
AR
Characteristic
DD
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
= 1 A
= 90 V, T
GS
DC
Pulse (Note 1)
DSS
= 20 kΩ)
th
ch
= 2.0 to 4.0 V (V
= 25°C (initial), L = 183 mH, R
= 100 μA (max) (V
(Note 1)
(Note 2)
DS (ON)
fs
(Ta = 25°C)
| = 0.6 S (typ.)
Symbol
V
V
V
E
E
T
I
I
T
DGR
P
DSS
GSS
DP
AR
I
AS
AR
stg
D
ch
DS
R
R
D
Symbol
2SK3498
th (ch-a)
th (ch-c)
= 4.0 Ω (typ.)
= 10 V, I
DS
= 400 V)
−55 to150
D
Rating
400
400
±30
113
150
= 1 mA)
20
1
1
3
1
2
G
Max
6.25
125
= 25 Ω,
Unit
mJ
mJ
°C/W
°C/W
°C
°C
W
Unit
V
V
V
A
A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B1B
2-7J1B
SC-64
2006-11-06
―
―
―
2SK3498
Unit: mm
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2SK3498_06 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) DC/DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • ...
Page 2
Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...