2SA1296_07 TOSHIBA [Toshiba Semiconductor], 2SA1296_07 Datasheet
2SA1296_07
Manufacturer Part Number
2SA1296_07
Description
Power Amplifier Applications Power Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1296_07.pdf
(3 pages)
Power Amplifier Applications
Power Switching Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
Low saturation voltage: V
Complementary to 2SC3266.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE (1)
Characteristics
Characteristics
Y: 120~240, GR: 200~400
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
CE (sat)
(Ta = 25°C)
= −0.5 V (max) @I
(Ta = 25°C)
V
V
V
Symbol
Symbol
(BR) CEO
h
h
(BR) EBO
V
V
V
CE (sat)
I
I
FE (1)
FE (2)
V
T
CBO
EBO
C
P
CBO
CEO
EBO
I
I
T
f
stg
BE
C
B
T
ob
C
2SA1296
j
(Note)
V
V
I
I
V
V
I
V
V
V
C
E
C
CB
EB
CE
CE
CE
CE
CB
= −0.1 mA, I
= −10 mA, I
= −2 A, I
−55~150
Rating
= −20 V, I
= −6 V, I
= −2 V, I
= −2 V, I
= −2 V, I
= −2 V, I
= −10 V, I
C
−0.5
−20
−20
750
150
−6
−2
= −2 A
1
B
Test Condition
= −0.1 A
C
C
C
C
C
B
E
E
C
= 0
= −0.1 A
= −2 A
= −0.1 A
= −0.5 A
= 0
= 0
= 0, f = 1 MHz
= 0
Unit
mW
°C
°C
V
V
V
A
A
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
120
Min
−20
−6
40
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
120
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2-5F1B
TO-92
SC-43
2007-11-01
−0.85
2SA1296
−0.1
−0.1
−0.5
Max
400
⎯
⎯
⎯
⎯
⎯
Unit: mm
MHz
Unit
μA
μA
pF
V
V
V
V
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2SA1296_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications • Low saturation voltage (sat) • Complementary to 2SC3266. Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector ...
Page 2
2 2SA1296 2007-11-01 ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...