2SA1300_07 TOSHIBA [Toshiba Semiconductor], 2SA1300_07 Datasheet
2SA1300_07
Manufacturer Part Number
2SA1300_07
Description
Strobe Flash Applications Medium Power Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1300_07.pdf
(3 pages)
Strobe Flash Applications
Medium Power Amplifier Applications
•
•
Absolute Maximum Ratings
Electrical Characteristics
High DC current gain and excellent h
: h
: h
Low saturation voltage: V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note 2: h
FE (1)
FE (2)
= 140~600 (V
= 60 (min), 120 (typ.) (V
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Characteristics
FE (1)
classification Y: 140~280, GR: 200~400, BL: 300~600
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
DC
Pulsed
CE
(I
= −1 V, I
(Note 1)
CE (sat)
C
= −2 A, I
(Ta = 25°C)
CE
C
= −0.5 V (max)
(Ta = 25°C)
V
V
= −1 V, I
= −0.5 A)
V
Symbol
Symbol
B
(BR) CEO
h
h
(BR) EBO
V
V
FE
V
V
CE (sat)
I
I
FE (1)
FE (2)
V
T
CBO
EBO
C
I
P
= −50 mA)
CBO
CEO
EBO
CES
I
CP
I
(Note 2)
T
f
stg
BE
C
B
T
ob
C
2SA1300
j
linearity
C
= −4 A)
V
V
I
I
V
V
I
V
V
V
C
E
C
CB
EB
CE
CE
CE
CE
CB
= −1 mA, I
= −10 mA, I
= −2 A, I
−55~150
Rating
= −20 V, I
= −6 V, I
= −1 V, I
= −1 V, I
= −1 V, I
= −1 V, I
= −10 V, I
−0.2
−20
−20
−10
750
150
−6
−2
−5
1
B
Test Condition
C
= −50 mA
C
C
C
C
C
B
E
E
= 0
= 0
= −0.5 A
= −4 A
= −2 A
= −0.5 A
= 0
= 0
= 0, f = 1 MHz
Unit
mW
°C
°C
V
V
V
A
A
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
140
Min
−10
−6
60
⎯
⎯
⎯
⎯
⎯
⎯
−0.83
Typ.
−0.2
120
140
50
⎯
⎯
⎯
⎯
⎯
2-5F1B
TO-92
SC-43
2007-11-01
2SA1300
−0.1
−0.1
−0.5
−1.5
Max
600
⎯
⎯
⎯
⎯
⎯
Unit: mm
MHz
Unit
μA
μA
pF
V
V
V
V
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2SA1300_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent 140~600 (V = − ( (min), ...
Page 2
2 2SA1300 2007-11-01 ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...