2SA1312_07 TOSHIBA [Toshiba Semiconductor], 2SA1312_07 Datasheet
2SA1312_07
Manufacturer Part Number
2SA1312_07
Description
Audio Frequency Low Noise Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1312_07.pdf
(5 pages)
Audio Frequency Low Noise Amplifier Applications
•
•
•
•
•
•
Absolute Maximum Ratings
Marking
High voltage: V
Excellent h
High h
Low noise: NF (2) = 0.2dB (typ.), 3dB (max) at f = 1 kHz
Complementary to 2SC3324
Small package
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE:
Characteristics
h
FE
FE
linearity: h
= 200~700
CEO
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
= −120 V
h= 0.95 (typ.)
FE
(I
C
= −0.1 mA)/ h
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1312
j
FE
(I
−55~125
C
Rating
−120
−120
−100
−20
150
125
= −2 mA)
−5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-236MOD
2-3F1A
SC-59
2007-11-01
2SA1312
Unit: mm
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2SA1312_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications • High voltage −120 V CEO • Excellent h linearity 0.95 (typ.) • High 200~700 FE: ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Note: h classification GR (G): 200~400, BL (L): 350~700 marking symbol (Ta = 25°C) Symbol ...
Page 3
3 2SA1312 2007-11-01 ...
Page 4
4 2SA1312 2007-11-01 ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...