2SA1313_07 TOSHIBA [Toshiba Semiconductor], 2SA1313_07 Datasheet

2SA1313_07

Manufacturer Part Number

2SA1313_07

Description

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SA1313_07.pdf (4 pages)

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Audio Frequency Low Power Amplifier Applications

Driver Stage Amplifier Applications

Switching Applications

•

Absolute Maximum Ratings

Marking

Excellent h

High voltage: V

Complementary to 2SC3325

Small package

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

linearity : h

CEO

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

= −50 V (min)

at V

FE (2)

= 25 (min)

= −6 V, I

(Ta = 25°C)

Symbol

CBO

CEO

EBO

stg

2SA1313

= −400 mA

−55~150

Rating

−500

−50

200

150

−5

Unit

°C

Weight: 0.012 g (typ.)

JEDEC

JEITA

TOSHIBA

TO-236MOD

2-3F1A

SC-59

2007-11-01

2SA1313

Unit: mm

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