2SA1315_07 TOSHIBA [Toshiba Semiconductor], 2SA1315_07 Datasheet

no-image

2SA1315_07

Manufacturer Part Number
2SA1315_07
Description
Power Amplifier Applications Power Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1315_07.pdf (5 pages)
Power Amplifier Applications
Power Switching Applications
•
•
•
Absolute Maximum Ratings
Low collector saturation voltage: V
High-speed switching time: t
Complementary to 2SC3328
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
stg
= 1.0 μs (typ.)
CE (sat)
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1315
j
= −0.5 V (max) (I
−55 to 150
Rating
−80
−80
900
150
−5
−2
−1
1
C
= −1 A)
Unit
mW
°C
°C
V
V
V
A
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
2006-11-09
―
2SA1315
Unit: mm

Related parts for 2SA1315_07

Image
Part Number
Description
Manufacturer
Datasheet
Request R
2sa1315
Part Number:
2sa1315
Description:
Toshiba Transistor Silicon Pnp Epitaxial Type
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2SA1315.pdf (5 pages)
TD62001APG
Part Number:
TD62001APG
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
TD62001APG.pdf (13 pages)
TD74BC541P
Part Number:
TD74BC541P
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
TD74BC541P.pdf (7 pages)
2SJ567_09
Part Number:
2SJ567_09
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ567_09.pdf (6 pages)
2SJ610_09
Part Number:
2SJ610_09
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ610_09.pdf (6 pages)
2SJ681_09
Part Number:
2SJ681_09
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
2SJ681_09.pdf (6 pages)
MG100Q2YS65H
Part Number:
MG100Q2YS65H
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS65H.pdf (6 pages)
MG300J2YS40
Part Number:
MG300J2YS40
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG300J2YS40.pdf (2 pages)
MG100Q2YS11
Part Number:
MG100Q2YS11
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG100Q2YS11.pdf (5 pages)
MP7003
Part Number:
MP7003
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP7003.pdf (7 pages)
MG30G6EL2
Part Number:
MG30G6EL2
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG30G6EL2.pdf (4 pages)
MP6759
Part Number:
MP6759
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP6759.pdf (5 pages)
MIG400J101H
Part Number:
MIG400J101H
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG400J101H.pdf (8 pages)
MIG30J103H
Part Number:
MIG30J103H
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG30J103H.pdf (10 pages)
MG600J2YS60A
Part Number:
MG600J2YS60A
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG600J2YS60A.pdf (9 pages)

2SA1315_07 Summary of contents

Page 1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: V • High-speed switching time: t stg • Complementary to 2SC3328 Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Note: h classification ...

Page 3

I – −2.0 −30 −15 −20 −1.6 −10 −1 −5 mA −0.8 Common emitter −0 25° −2 −4 −6 −8 −10 Collector-emitter voltage V ( – I ...

Page 4

V – (sat) C −3 Common emitter −55°C −1 −0.5 25 100 −0.3 −0.1 −0.01 −0.03 −0.1 −0.3 Collector current I (A) C Safe Operating Area − max ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

Related keywords