2SA1315_07 TOSHIBA [Toshiba Semiconductor], 2SA1315_07 Datasheet
2SA1315_07
Related parts for 2SA1315_07
2SA1315_07 Summary of contents
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications • Low collector saturation voltage: V • High-speed switching time: t stg • Complementary to 2SC3328 Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage ...
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Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Note: h classification ...
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I – −2.0 −30 −15 −20 −1.6 −10 −1 −5 mA −0.8 Common emitter −0 25° −2 −4 −6 −8 −10 Collector-emitter voltage V ( – I ...
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V – (sat) C −3 Common emitter −55°C −1 −0.5 25 100 −0.3 −0.1 −0.01 −0.03 −0.1 −0.3 Collector current I (A) C Safe Operating Area − max ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...