2SA1327A_06 TOSHIBA [Toshiba Semiconductor], 2SA1327A_06 Datasheet
2SA1327A_06
Manufacturer Part Number
2SA1327A_06
Description
Strobe Flash Applications Audio Power Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1327A_06.pdf
(4 pages)
Strobe Flash Applications
Audio Power Amplifier Applications
•
•
•
Absolute Maximum Ratings
High DC current gain: h
Low collector saturation voltage: V
High collector power dissipation: P
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
DC
Pulse
Ta = 25°C
Tc = 25°C
FE
= 70 (min) (V
(I
CE (sat)
C
C
(Tc = 25°C)
= 20 W (Tc = 25°C)
= −8 A, I
Symbol
V
V
V
2SA1327A
T
I
P
CBO
CEO
EBO
I
CP
I
T
stg
C
B
C
j
CE
= −0.5 V (max)
= −2 V, I
B
= −0.4 A)
−55 to 150
Rating
−50
−20
−10
−20
150
C
2.0
−8
−2
20
1
= −1 A)
Unit
°C
°C
W
V
V
V
A
A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10R1A
2SA1327A
2006-11-09
―
―
Unit: mm
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2SA1327A_06 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Strobe Flash Applications Audio Power Amplifier Applications • High DC current gain (min • Low collector saturation voltage: V • High collector power dissipation: P Absolute Maximum ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note: h classification O: 100 to 200, Y: 160 to 320 FE (1) Marking A1327A ...
Page 3
I – −10 −80 Common emitter Tc = 25°C −60 −8 −40 −6 −20 − −10 mA − −2 −4 −6 −8 Collector-emitter voltage – 1000 ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...