2SA1356_06 TOSHIBA [Toshiba Semiconductor], 2SA1356_06 Datasheet
2SA1356_06
Manufacturer Part Number
2SA1356_06
Description
Audio Power Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1356_06.pdf
(4 pages)
Audio Power Amplifier Applications
•
•
•
Absolute Maximum Ratings
(I
Low saturation voltage: V
High collector power dissipation: P
Complementary to 2SC3419
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
C
= −500 mA, I
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
B
= −50 mA)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Ta = 25°C
Tc = 25°C
CE
(sat) = −0.32 V (typ.)
C
(Tc = 25°C)
= 1.2 W (Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1356
j
−55 to 150
Rating
−800
−40
−40
−80
150
1.2
−5
5
1
Unit
mA
mA
°C
°C
W
V
V
V
Weight: 0.82 g (typ.)
JEDEC
JEITA
TOSHIBA
2-8H1A
2006-11-09
―
―
2SA1356
Unit: mm
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2SA1356_06 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Power Amplifier Applications • Low saturation voltage: V (sat) = −0.32 V (typ −500 mA −50 mA • High collector power dissipation: P • ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note: h classification 140, Y: 120 to 240 FE (1) Marking Lot ...
Page 3
I – −1000 Common emitter Tc = 25°C −20 −12 −800 −600 −400 −2 mA −200 0 0 −1 −2 −3 −4 Collector-emitter voltage – (sat) C −1.0 Common ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...