2SK3921-01S FUJI [Fuji Electric], 2SK3921-01S Datasheet

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2SK3921-01S

Manufacturer Part Number

2SK3921-01S

Description

N-CHANNEL SILICON POWER MOSFET

Manufacturer

FUJI [Fuji Electric]

Datasheet

1.2SK3921-01S.pdf (4 pages)

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2SK3921-01L,S,SJ

Super FAP-G Series

Note *1 Tch 150°C

Note *2 Starting Tch=25°C, I

Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.

Note *4 I

http://www.fujielectric.co.jp/fdt/scd/

Thermalcharacteristics

Item

Drain-source voltage

Continuous drain current

Pulsed drain current

Gate-source voltage

Repetitive or non-repetitive

Non-repetitive

Maximum avalanche energy

Repetitive

Maximum avalanche energy

Maximum drain-source dV/dt

Peak diode recovery dV/dt

Maximum power dissipation

Operating and storage

temperature range

Maximum ratings and characteristic

(Tc=25°C unless otherwise specified)

Thermal resistance

Item

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Forward transcondutance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time t

Turn-off time t

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Diode forward on-voltage

Reverse recovery time

Reverse recovery charge

Item

Electrical characteristics (T

Features

High speed switching

No secondary breadown

Avalanche-proof

Applications

Switching regulators

UPS (Uninterruptible Power Supply)

E

See to ‘Transient Thermal impedance’ graph.

See to ‘Avalanche Energy’ graph.

F

AS

= <

= <

= <

-I

limited by maximum channel temperrature and avalanche current.

D

, -di/dt=50A/μs, Vcc BV

off

on

AS

=27A, L=1.32mH, V

= <

c

Symbol

V

V

I

I

V

I

E

dV

dV/dt

P

T

T

D

AR

D(puls]

=25°C unless otherwise specified)

AS

D

ch

stg

DSX

DS

GS

DS

DSS

/dt

R

R

Symbol

, Tch 150°C

Symbol

V

V

I

R

g

C

C

C

td

t

td

t

Q

Q

Q

V

t

Q

th(ch-c)

th(ch-a)

GSS

f

DC-DC converters

I

r

rr

Low driving power

fs

Low on-resistance

DSS

(BR)DSS

GS(th)

DS(on)

iss

oss

rss

SD

G

GS

GD

rr

(on)

(off)

CC

= <

=48V, R

-55 to +150

Ratings

±268

+150

Absolute maximum ratings

120

±30

719.1

270

90

67

67

27.0

20

5

2.02

G

Test Conditions

Test Conditions

I

I

V

V

f=1MHz

V

I

V

I

I

-di/dt=100A/μs

V

V

R

V

V

=50Ω

V

I

I

channel to ambient

D

D

D

F

F

channel to case

D

D

DS

GS

CC

GS

CC

GS

GS

=67A V

=67A V

= 250 μ A

= 250 μ A

DS

DS

GS

=67A

=33.5A

=33.5A

=75V

=0V

=10V

=48V I

=10V

=10 Ω

=60V

=120V V

=96V

=±30V

Unit

mJ

mJ

kV/μs

kV/μs

W

W

°C

°C

A

A

A

V

V

V

N-CHANNEL SILICON POWER MOSFET

GS

GS

D

V

V

V

V

=0V T

=33.5A

=0V

DS

VGS=-30V

Note *1

Note *2

Note *3

VDS 120V

Note *4

Ta=25 °C

Tc=25 °C

GS

DS

FUJI POWER MOSFET

Remarks

V

V

GS

GS

DS

GS

=0V

=10V

=25V

=0V

=0V

T

=V

=0V

ch

= <

ch

=25°C

GS

=25°C

T

T

ch

ch

=125°C

=25°C

Outline Drawings [mm]

Equivalent circuit schematic

Gate(G)

Min.

Min.

120

14

3.0

See to P4

Typ.

1880

Typ.

360

150

24.6

28

30

20

35

50

23

52

16

18

1.10

0.9

Source(S)

Drain(D)

Max.

2820

Max.

62.0

250

100

540

0.463

25

30.0

45

30

53

75

35

78

24

27

5.0

1.50

Units

Units

°C/W

°C/W

200509

ns

V

V

μA

nA

mΩ

S

pF

nC

V

ns

μC

1

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