2SK3921-01S FUJI [Fuji Electric], 2SK3921-01S Datasheet - Page 2

no-image

2SK3921-01S

Manufacturer Part Number
2SK3921-01S
Description
N-CHANNEL SILICON POWER MOSFET
Manufacturer
FUJI [Fuji Electric]
Datasheet
2SK3921-01L,S,SJ
Characteristics
0.20
0.16
0.12
0.08
0.04
0.00
280
240
200
160
120
100
0.1
80
40
10
VGS=5.5V
0
1
0
0
0
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
Allowable Power Dissipation
PD=f(Tc)
Typical Transfer Characteristic
ID=f(VGS):80
1
6.0V
25
20
2
6.5V
3
50
40
7.0V
μ
4
s pulse test,VDS=25V,Tch=25
VGS[V]
ID [A]
Tc [
75
60
μ
5
°
s pulse test,Tch=25
C]
7.5V
6
100
80
7
8
125
100
9
10V
150
120
10
20V
°
C
°
C
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
140
120
100
100
0.1
80
60
40
20
10
0
1
0.1
0
Typical Transconductance
gfs=f(ID):80
Typical Output Characteristics
ID=f(VDS):80
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=33.5A,VGS=10V
-50
-25
1
0
2
FUJI POWER MOSFET
μ
1
s pulse test,VDS=25V,Tch=25
μ
25
s pulse test,Tch=25
max.
3
VDS [V]
ID [A]
Tch [
20V
50
typ.
10V
°
C]
4
75
10
5
100
VGS=5.5V
6
125
°
8.0V
6.5V
7.0V
7.5V
6.0V
C
100
150
7
°
C
2

Related parts for 2SK3921-01S