2N6052_06 ONSEMI [ON Semiconductor], 2N6052_06 Datasheet - Page 5
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2N6052_06
Manufacturer Part Number
2N6052_06
Description
Darlington Complementary Silicon Power Transistors
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.2N6052_06.pdf
(7 pages)
20,000
10,000
5000
3000
2000
1000
500
300
200
3.0
2.6
2.2
1.8
1.4
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.2
0.5
0.2
PNP
2N6052
T
I
J
0.3
C
0.3
T
V
= 150°C
T
−55 °C
J
= 3.0 A
BE(sat)
J
= 25°C
= 25°C
25°C
V
1.0
BE
0.5
0.5
@ V
@ I
C
I
I
CE
C
/I
C
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
B
= 3.0 V
2.0
= 250
I
1.0
B
6.0 A
V
1.0
, BASE CURRENT (mA)
CE(sat)
3.0
@ I
2.0
2.0
C
5.0
/I
B
3.0
3.0
= 250
9.0 A
10
5.0
Figure 10. Collector Saturation Region
5.0
V
CE
Figure 9. DC Current Gain
Figure 11. “On” Voltages
20
10
= 3.0 V
10
http://onsemi.com
30
12 A
20
50
20
5
40,000
20,000
10,000
6,000
4,000
2,000
1,000
600
400
3.0
2.6
2.2
1.8
1.4
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.2
0.5
0.2 0.3
NPN
2N6058, 2N6059
I
C
V
0.3
= 3.0 A
T
BE(sat)
T
J
J
= 25°C
= 25°C
1.0
@ I
0.5
0.5
C
/I
I
I
B
V
C
C
, COLLECTOR CURRENT (AMP)
= 250
, COLLECTOR CURRENT (AMP)
BE
2.0
I
@ V
1.0
B
1.0
, BASE CURRENT (mA)
T
6.0 A
J
= 150°C
CE
3.0
= 3.0 V
−55 °C
25°C
2.0
2.0
V
5.0
CE(sat)
3.0
3.0
@ I
9.0 A
C
5.0
10
/I
5.0
B
= 250
V
CE
20
10
= 3.0 V
10
12 A
30
20
20
50