2N5301_TO-18 MICROSS [Micross Components], 2N5301_TO-18 Datasheet
![no-image](/images/no-image-200.jpg)
2N5301_TO-18
Manufacturer Part Number
2N5301_TO-18
Description
a very High Input Impedance N-Channel JFET amplifier
Manufacturer
MICROSS [Micross Components]
Datasheet
1.2N5301_TO-18.pdf
(1 pages)
2N5301 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
The 2N5301 N-channel JFET is designed to provide
performance amplification at low frequencies and with
low noise.
The hermetically sealed TO-18 package is well suited
2N5301 Benefits:
for military applications and harsh environment
2N5301 Applications:
Micross Components Europe
Tel: +44 1603 788967
Email:
Web:
SYMBOL
NOTES
V
BV
GS(off)
I
I
C
C
g
e
GSS
DSS
The 2N5301 is a very High Input Impedance N-Channel JFET amplifier
I
G
rss
iss
http://www.micross.com/distribution
GSS
fs
n
chipcomponents@micross.com
Linear Systems replaces discontinued LF5301 and PF5301
Insignificant Signal Loss/Error Voltage
with High-Impedance Source
Maximum Signal Output, Low Noise
High Sensitivity to Low-Level Signals
High-Impedance Transducer
Smoke Detector Input
Infrared Detector Amplifier
Precision Test Equipment
Click To Buy
1 . Absolute maximum ratings are limiting values above which 2N5301 serviceability may be impaired.
Gate to Source Breakdown Voltage
Gate to Source Saturation Current
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Equivalent Input Noise Voltage
Gate to Source Cutoff Voltage
Reverse Transfer Capacitance
Forward Transconductance
Gate Operating Current
Gate Leakage Current
Input Capacitance
CHARACTERISTIC
Available Packages:
2N5301 in TO-18
2N5301 in bare die.
Please contact Micross for full
package and die dimensions
MIN
‐30
0.6
30
70
‐‐
‐‐
‐‐
‐‐
‐‐
N-CHANNEL JFET
FEATURES
DIRECT REPLACEMENT FOR LF5301 & PF5301
HIGH INPUT IMPENDANCE
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source
0.04
2N5301
TYP.
45
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX
500
300
150
3.0
1.5
‐1
‐‐
‐‐
3
chipcomponents@micross.com
nV/√Hz
UNITS
pA
µA
µS
pF
V
V
TO-18 (Bottom View)
V
Web:
V
V
DG
www.micross.com/distribution.aspx
V
DS
DS
= 10V, I
= 10V, V
= 10V, V
V
V
V
DG
V
DS
DS
DS
DG
= 0V, V
= 10V, I
= 10V, V
CONDITIONS
= 0V, I
= 6V, I
D
GS
= 50µA , f = 100Hz
GS
‐65°C to +175°C
‐65°C to +150°C
I
= 0V, f = 1MHz
= 0V, f = 1kHz
G
D
g
D
GS
D
= 0.100 pA
fs
300mW
= ‐1µA
GS
= 5µA
50mA
= 1nA
= 70 µS
‐30V
= ‐15V
= 0V