BFS17P_07 INFINEON [Infineon Technologies AG], BFS17P_07 Datasheet
BFS17P_07
Related parts for BFS17P_07
BFS17P_07 Summary of contents
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NPN Silicon RF Transistor For broadband amplifiers GHz at collector currents from Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Maximum Ratings ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 200 MHz mA 200 MHz C ...
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Total power dissipation P 320 mW 240 200 160 120 Permissible Pulse Load totmax totDC 0.005 0.01 0.02 0.05 ...
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Transition frequency parameter CE 3 GHz 2 1 10V 0. BFS17P 2007-03-30 ...
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Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...
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Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...