BFP181_07 INFINEON [Infineon Technologies AG], BFP181_07 Datasheet
BFP181_07
Related parts for BFP181_07
BFP181_07 Summary of contents
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NPN Silicon RF Transistor* For low noise, high-gain broadband amplifiers at collector currents from 0 GHz 0 900 MHz T Pb-free (RoHS compliant) package Qualified according AEC Q101 * ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: 0.0010519 22.403 V VAF = 1.7631 - NE = 5.1127 V VAR = 1.6528 - NC = 6.6315 RBM = 1.8168 fF CJE = 17.028 ps TF ...
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Total power dissipation P tot 200 mW 160 140 120 100 Permissible Pulse Load totmax totDC ...
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Package Outline 0.8 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT143 2.9 ±0 0.2 +0.1 -0.05 +0.1 0.4 -0.05 ...
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Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...