BFP540ESD_09 INFINEON [Infineon Technologies AG], BFP540ESD_09 Datasheet

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NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance typical value 1000 V (HBM) • Outstanding Noise Figure F = 0.9 dB • Gold metallization for high ...

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Thermal Resistance Parameter 1) Junction - soldering point Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base ...

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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...

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Simulation Data For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models. and download the latest version before actually starting your design. The simulation data have been generated and verified GHz ...

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Total power dissipation P tot 300 250 200 150 100 100 T [°C] S Permissible Pulse Load ƒ totmax totDC 0.005 0.01 0.02 ...

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Third order Intercept Point Ω ) (Output parameter 900 MHz [mA ...

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Power gain parameter in GHz [V] CE Noise ...

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Source impedance for min. noise figure vs. frequency 1.5 0.5 0.4 0.3 0.2 0.1 1.8GHz 2.4GHz 0.9GHz 0.1 0.2 0.3 0.4 0.5 1 1.5 2 3GHz ...

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Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...

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Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With ...