2SC4207_07 TOSHIBA [Toshiba Semiconductor], 2SC4207_07 Datasheet
2SC4207_07
Manufacturer Part Number
2SC4207_07
Description
Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC4207_07.pdf
(4 pages)
Audio Frequency General Purpose Amplifier Applications
•
•
•
•
•
Absolute Maximum Ratings
Marking
Small package (dual type)
High voltage and high current: V
High h
Excellent h
Complementary to 2SA1618
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
Note 1: Total rating
FE:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
h
FE
FE
linearity: h
= 120~700
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
FE
(I
C
= 0.1 mA)/h
CEO
(Ta = 25°C) (Q1, Q2 common)
Symbol
V
V
V
= 50 V, I
T
P
CBO
CEO
EBO
I
I
(Note 1)
T
stg
C
B
C
2SC4207
j
FE
C
(I
= 150 mA (max)
C
−55~125
= 2 mA) = 0.95 (typ.)
Equivalent Circuit
Rating
150
300
125
60
50
30
5
1
Unit
mW
mA
mA
°C
°C
V
V
V
(top view)
Weight: 0.014 g (typ.)
JEDEC
JEITA
TOSHIBA
2-3L1A
2007-11-01
2SC4207
―
―
Unit: mm
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2SC4207_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications • Small package (dual type) • High voltage and high current: V • High 120~700 FE: FE • Excellent h linearity ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Note 2: h classification Y (Y): 120~240, GR (G): 200~400, BL (L): 350~700 marking symbol (Ta = ...
Page 3
Q2 common) *: Total rating 3 2SC4207 2007-11-01 ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...