2SC4213_07 TOSHIBA [Toshiba Semiconductor], 2SC4213_07 Datasheet
2SC4213_07
Manufacturer Part Number
2SC4213_07
Description
Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC4213_07.pdf
(5 pages)
For Muting and Switching Applications
•
•
•
•
•
Absolute Maximum Ratings
Marking
High emitter-base voltage: V
High reverse h
Low on resistance: R
High DC current gain: h
Small package
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
FE
: Reverse h
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
ON
= 1 Ω (typ.) (I
FE
= 200~1200
FE
EBO
= 150 (typ.) (V
= 25 V (min)
(Ta = 25°C)
Symbol
V
V
V
B
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
= 5 mA)
C
2SC4213
j
CE
= −2 V, I
−55~125
Rating
300
100
125
50
20
25
60
1
C
= −4 mA)
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
2-2E1A
SC-70
2007-11-01
2SC4213
―
Unit: mm
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2SC4213_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications • High emitter-base voltage: V EBO • High reverse h : Reverse • Low on resistance Ω (typ • ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Note: h classification A: 200~700, B: 350~1200 FE (Ta = ...
Page 3
3 2SC4213 2007-11-01 ...
Page 4
4 2SC4213 2007-11-01 ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...