2SC2235_06 TOSHIBA [Toshiba Semiconductor], 2SC2235_06 Datasheet

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2SC2235_06

Manufacturer Part Number
2SC2235_06
Description
Silicon NPN Epitaxial Type (PCT Process)
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC2235_06.pdf (4 pages)
Audio Power Amplifier Applications
Driver Stage Amplifier Applications
•
Absolute Maximum Ratings
Complementary to 2SA965.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SC2235
j
−55 to 150
Rating
120
120
800
900
150
80
5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
2006-11-09
2SC2235
―
Unit: mm

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2SC2235_06 Summary of contents

Page 1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Power Amplifier Applications Driver Stage Amplifier Applications • Complementary to 2SA965. Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note: h classification 160, Y: 120 to 240 FE ...

Page 3

I – 1000 Common emitter Ta = 25°C 800 600 4 3 400 2 200 Collector-emitter voltage ...

Page 4

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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