2SC2290A_07 TOSHIBA [Toshiba Semiconductor], 2SC2290A_07 Datasheet - Page 2

• Manufacturer Part Number: 2SC2290A_07
• Description: SILICON NPN EPITAXIAL PLANAR TYPE
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector Output Capacitance
Power Gain
Input Power
Collector Efficiency
Intermodulation Distortion
Series Equivalent Input Impedance
Series Equivalent Output Impedance
* Pulse Test:
CHARACTERISTIC
Pulse Width ≤ 100μs, Duty Cycle ≤ 3%
V
V
V
SYMBOL
(BR) CEO
(BR) CES
(BR) EBO
IMD
Z
h
C
G
η
Z
Pi
out
FE
ob
C
in
p
(Tc = 25°C)
I
I
I
V
V
f = 1MHz
V
f
I
Po = 60W
V
f
Po = 60W
C
C
E
2
idle
2
CE
CB
CC
CC
= 28.001MHz
= 28.001MHz
= 1mA, I
= 100mA, I
= 100mA, V
2
= 50mA
= 5V, I
= 12.5V, I
= 12.5V, f
= 12.5V, f
TEST CONDITION
PEP
PEP
C
C
= 0
= 10A *
B
EB
(Fig.)
E
1
1
= 0
= 28.000MHz,
= 28.000MHz,
= 0
= 0
MIN.
11.8
18
45
10
35
—
—
—
—
—
4
−j0.17
−j0.21
TYP.
13.8
1.02
0.86
2.5
—
—
—
—
—
—
—
2SC2290A
2007-11-01
MAX.
150
500
−30
—
—
—
—
—
—
—
4
W
UNIT
pF
dB
dB
—
%
PEP
Ω
Ω
V
V
V