2N7000KL-TR1 VISHAY [Vishay Siliconix], 2N7000KL-TR1 Datasheet - Page 3

• Manufacturer Part Number: 2N7000KL-TR1
• Description: N-Channel 60-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72705
S-40247—Rev. A, 16-Feb-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
7
6
5
4
3
2
1
0
1
0.0
0.00
0.0
V
V
GS
V
I
D
GS
Source-Drain Diode Forward Voltage
DS
T
On-Resistance vs. Drain Current
0.1
= 250 mA
J
= 4.5 V
= 0 V
V
0.2
= 125_C
0.3
= 10 V
SD
Q
− Source-to-Drain Voltage (V)
g
I
D
0.2
− Total Gate Charge (nC)
− Drain Current (mA)
Gate Charge
0.4
0.6
0.3
0.6
T
0.9
J
T
= −55_C
0.4
J
= 25_C
V
GS
1.2
0.8
= 10 V
0.5
1.5
0.6
1.0
New Product
2.0
1.6
1.2
0.8
0.4
0.0
40
32
24
16
8
0
5
4
3
2
1
0
−50
0
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
−25
2N7000KL/BS170KL
5
2
I
D
V
C
T
V
GS
rss
J
DS
0
= 200 mA
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
V
GS
25
Capacitance
10
4
= 10 V @ 500 mA
Vishay Siliconix
C
V
iss
50
GS
= 0 V
C
15
6
I
oss
75
D
= 500 mA
V
@ 200 mA
100
GS
www.vishay.com
20
= 4.5 V
8
125
150
25
10
3