ZXMN10A07Z_04 ZETEX [Zetex Semiconductors], ZXMN10A07Z_04 Datasheet
ZXMN10A07Z_04
Related parts for ZXMN10A07Z_04
ZXMN10A07Z_04 Summary of contents
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N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =100V : R =0 (BR)DSS DS(on) DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This ...
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ZXMN10A07Z ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage Continuous drain current @ V =10V =10V =10V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body ...
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ISSUE 6 - MAY 2004 CHARACTERISTICS 3 ZXMN10A07Z ...
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ZXMN10A07Z ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (1) resistance (1) (3) Forward transconductance (3) DYNAMIC Input capacitance Output capacitance Reverse transfer capacitance (2) (3) ...
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ISSUE 6 - MAY 2004 TYPICAL CHARACTERISTICS 5 ZXMN10A07Z ...
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ZXMN10A07Z TYPICAL CHARACTERISTICS 6 ISSUE 6 - MAY 2004 ...
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PACKAGE DIMENSIONS Millimeters DIM Min Max Min A 4.40 4.60 0.173 B 3.75 4.25 .150 C 1.40 1.60 0.550 0.28 0.45 0.011 G 0.38 0.55 0.015 H 1.50 ...