ZXMN10A07Z_04 ZETEX [Zetex Semiconductors], ZXMN10A07Z_04 Datasheet - Page 4

• Manufacturer Part Number: ZXMN10A07Z_04
• Description: 100V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN10A07Z
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
Reverse recovery time
Reverse recovery charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated).
300 s; duty cycle
4
MIN.
100
2.0
TYP.
0.85
138
1.6
1.8
1.5
4.1
2.1
2.9
0.7
12
27
12
6
1
2%.
MAX. UNIT CONDITIONS
0.95
100
0.7
0.9
1
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt=100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
= 250 A, V
= 250 A, V
= 1A
=25°C, I
=25°C, I
≅6.0 , V
= 15V, I
= 50V, V
= 50V, V
= 100V, V
= 10V, I
= 6V, I
= 50V, I
=0V
= 20V, V
ISSUE 6 - MAY 2004
S
F
D
= 1A,
= 1.5A,
GS
D
D
D
= 1A
GS
GS
= 1.5A
= 1A
= 1A
GS
DS
= 10V
GS
DS
=0V
= 10V
=V
=0V
=0V
=0V
GS