ZXMN3F318DN8TA ZETEX [Zetex Semiconductors], ZXMN3F318DN8TA Datasheet

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ZXMN3F318DN8TA

Manufacturer Part Number
ZXMN3F318DN8TA
Description
30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN3F318DN8TA
Manufacturer:
ZETEX
Quantity:
20 000
ZXMN3F318DN8
30V SO8 Asymmetrical dual N-channel enhancement mode
MOSFET
Summary
Description
This new generation dual Trench MOSFET from Zetex features low on-resistance achievable
with low (4.5V) gate drive
Features
Applications
Ordering information
Device
ZXMN3F318DN8TA
Device marking
ZXMN
3F318
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
Device
Low on-resistance
4.5V gate drive capability
Low profile SOIC package
DC-DC Converters
SMPS
Load switching
Motor control
Backlighting
Q1
Q2
V
(BR)DSS
30
30
Q
Reel size
(inches)
G
.
12.9
9
(nC)
7
Tape width
0.039 @ V
0.055 @ V
0.024 @ V
0.035 @ V
R
(mm)
12
DS
(on)
GS
GS
GS
GS
1
= 4.5V
= 4.5V
(Ω)
= 10V
= 10V
Quantity
per reel
500
I
D
7.3
5.7
4.8
6
(A)
Q2
Pinout – top view
www.zetex.com
Part no.
Q1

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ZXMN3F318DN8TA Summary of contents

Page 1

... Low profile SOIC package Applications • DC-DC Converters • SMPS • Load switching • Motor control • Backlighting Ordering information Device Reel size (inches) ZXMN3F318DN8TA 7 Device marking ZXMN 3F318 Issue 1 – March 2008 © Zetex Semiconductors plc 2008 I (A) R (Ω) (on 7.3 0.024 @ V ...

Page 2

ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T =25°C (a) (d) A Linear Derating ...

Page 3

Thermal Characteristics Q1 100 R DS(on) Limited 100m 1s 100ms 10m 10ms Single Pulse T =25°C amb 1m One active die 100m 1 V Drain-Source Voltage (V) DS Safe Operating Area 110 T =25°C 100 amb One ...

Page 4

Q1 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) ...

Page 5

Q1 Typical Characteristics 10V 0 25°C 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 10V 150° Gate-Source Voltage (V) GS Typical Transfer Characteristics ...

Page 6

C 500 ISS C OSS 400 300 200 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuits Issue 1 – March 2008 © Zetex Semiconductors plc 2008 10 ...

Page 7

Q2 ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1) (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) ...

Page 8

Q2 Typical Characteristics 10V 25°C 0.01 0 Drain-Source Voltage (V) DS Output Characteristics 10V 150°C 1 0.1 0. Gate-Source Voltage (V) GS Typical Transfer Characteristics ...

Page 9

Q2 Typical Characteristics 600 500 400 C ISS 300 200 100 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Issue 1 – March 2008 © Zetex Semiconductors plc 2008 ...

Page 10

Packaging details – SO8 Issue 1 – March 2008 © Zetex Semiconductors plc 2008 ZXMN3F318DN8 10 www.zetex.com ...

Page 11

Issue 1 – March 2008 © Zetex Semiconductors plc 2008 Intentionally left blank 11 ZXMN3F318DN8 www.zetex.com ...

Page 12

Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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