ZXMN3F318DN8TA ZETEX [Zetex Semiconductors], ZXMN3F318DN8TA Datasheet - Page 5

• Manufacturer Part Number: ZXMN3F318DN8TA
• Description: 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

Q1 Typical Characteristics
Q1 Typical Characteristics
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
1000
0.01
Typical Transfer Characteristics
0.01
100
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
10
0.01
1
1
1
V
0.1
DS
V
V
T = 150°C
= 10V
2.5V
DS
GS
Output Characteristics
2
0.1
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
10V
D
Drain Current (A)
5V
T = 25°C
1
1
3V
T = 25°C
3
T = 25°C
3.5V
4V
10
3.5V
10
4V
4.5V
10V
2.5V
V
3V
V
GS
GS
4
5
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
DS
SD
Output Characteristics
T = 150°C
0.4
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
ZXMN3F318DN8
10V
V
I
D
GS
V
I
= 7A
D
GS
= 10V
= 250uA
1
0.6
50
= V
4V
DS
3.5V
www.zetex.com
100
0.8
T = 25°C
Vgs = -3V
10
3V
R
V
2.5V
DS(on)
2V
GS(th)
1.5V
V
GS
150
1.0