IRFR13N20 IRF [International Rectifier], IRFR13N20 Datasheet - Page 2

• Manufacturer Part Number: IRFR13N20
• Description: Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)
• Manufacturer: IRF [International Rectifier]

IRFR13N20D/IRFU13N20D
Diode Characteristics
Dynamic @ T
Avalanche Characteristics
Thermal Resistance
Static @ T
R
E
I
E
R
R
R
V
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
2
V
fs
AS
AR
(BR)DSS
DS(on)
GS(th)
gs
gd
iss
oss
rss
oss
oss
oss
SD
g
rr
JC
JA
JA
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
3.0
6.2
Min. Typ. Max. Units
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.25
–––
–––
–––
–––
–––
––– -100
–––
830
140
990
–––
–––
–––
––– 0.235
140
750 1120
7.3
25
12
11
27
17
10
35
57
59
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
210
5.5
1.3
25
38
11
18
13
52
V/°C
µA
nA
nC
ns
nC
pF
ns
V
V
S
A
V
Typ.
Typ.
–––
–––
–––
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
MOSFET symbol
integral reverse
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 7.8A
= 7.8A
= 25°C, I
= 25°C, I
= 6.8
= V
= 200V, V
= 160V, V
= 50V, I
= 160V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V,
= 100V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 7.8A, V
= 7.8A
= 250µA
= 8.0A
= 7.8A
GS
GS
= 0V to 160V
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 160V, ƒ = 1.0MHz
110
130
7.8
1.4
11
50
= 0V
= 0V, T
www.irf.com
D
= 1mA
GS
J
G
= 0V
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
S
D
)