SUD50N02-04P_08 VISHAY [Vishay Siliconix], SUD50N02-04P_08 Datasheet - Page 2

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SUD50N02-04P_08

Manufacturer Part Number
SUD50N02-04P_08
Description
N-Channel 20-V (D-S) 175C MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
SUD50N02-04P
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain Source On State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
200
160
120
c
c
80
40
0
a
0.0
Parameter
c
c
c
c
c
0.5
b
b
V
DS
b
Output Characteristics
- Drain-to-Source Voltage (V)
1.0
V
b
J
GS
= 25_C UNLESS OTHERWISE NOTED)
= 10 thru 5 V
1.5
Symbol
V
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
2.0
I
C
GS(th)
I
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
R
Q
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
g
4 V
3 V
2.5
C
3.0
V
I
V
V
V
V
D
= 25_C)
GS
DS
DS
DS
GS
^ 50 A, V
= 0 V, V
I
= 20 V, V
= 10 V, V
V
= 10 V, I
F
V
V
V
V
V
V
V
DS
V
V
10 V, V
= 50 A, di/dt = 100 A/ms
DS
I
Test Condition
GS
DD
DD
DS
DS
GS
F
GS
DS
= 0 V, V
= 50 A, V
= V
= 10 V, R
= 10 V, R
= 0 V, I
= 20 V, V
= 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
DS
GEN
f = 1 MHz
D
GS
GS
GS
GS
= 10 V, f = 1 MHz
= 20 A, T
, I
= 10 V, R
= 0 V, T
GS
= 4.5 V, I
D
D
GS
GS
D
4.5 V, I
= 250 mA
D
L
L
GS
D
= 250 mA
= "20 V
= 20 A
= 0.2 W
= 0.2 W
= 20 A
= 20 A
= 10 V
= 0 V
= 0 V
J
J
= 125_C
g
g
= 125_C
D
D
200
150
100
= 2.5 W
50
= 50 A
0
50 A
0
1
T
C
V
= 125_C
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
0.8
20
50
15
2
25_C
3
0.0035
0.0048
Typ
5000
1650
770
1.6
0.9
40
14
13
20
20
50
15
45
S-40272—Rev. B, 23-Feb-04
a
−55_C
Document Number: 72216
4
0.0043
0.0061
"100
Max
0.006
100
3.0
1.5
50
60
30
30
75
25
70
1
5
Unit
nC
nC
nA
mA
mA
pF
p
ns
ns
ns
W
W
W
V
V
A
S
A
V
6

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