2SK2376_06 TOSHIBA [Toshiba Semiconductor], 2SK2376_06 Datasheet
2SK2376_06
Related parts for 2SK2376_06
2SK2376_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS ...
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Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...
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3 2SK2376 2006-11-17 ...
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4 2SK2376 2006-11-17 ...
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Ω 471 μ 2SK2376 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − V VDSS DD ⎝ ⎠ ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...