2SK2400_06 TOSHIBA [Toshiba Semiconductor], 2SK2400_06 Datasheet
2SK2400_06
Manufacturer Part Number
2SK2400_06
Description
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK2400_06.pdf
(6 pages)
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
4-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
= 25 V, T
GS
Pulse (Note 1)
DC (Note 1)
= 20 kΩ)
ch
= 25°C (initial), L = 11.6 mH, R
(Note 2)
: I
: V
DSS
th
= 0.8~2.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
Symbol
Symbol
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK2400
fs
| = 4.5 S (typ.)
DS
= 17 Ω (typ.)
= 10 V, I
−55~150
Rating
DS
0.13
Max
96.1
100
100
±20
180
150
1.3
20
5
5
1
G
= 100 V)
= 25 Ω, I
D
= 1 mA)
°C / W
Unit
Unit
AR
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 5 A
Weight: 0.54 g (typ.)
JEDEC
JEITA
TOSHIBA
2
−π−MOSV)
2-8M1B
2006-11-20
―
―
2SK2400
Unit: mm
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2SK2400_06 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V th ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...
Page 3
3 2SK2400 2006-11-20 ...
Page 4
4 2SK2400 2006-11-20 ...
Page 5
Safe Operating Area 100 I D max (pulsed ms max (pulsed max (Continuous ms 0.5 DC Operation Ta = 25°C 0.3 0.1 *: Single Nonrepetitive Pulse Tc = ...
Page 6
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...