2SK2503_1 ROHM [Rohm], 2SK2503_1 Datasheet - Page 4

• Manufacturer Part Number: 2SK2503_1
• Description: 4V Drive Nch MOS FET
• Manufacturer: ROHM [Rohm]

Transistors
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
Fig.13
1000
0.05
500
200
100
0.5
0.2
0.1
50
20
10
10
0.05
5
2
5
2
1
0.001
0.01
0.1
10
0
1
Fig.10 Reverse Drain Current
10µ
V
Pulsed
0.2
D=1
0.5
0.1
0.05
0.02
SOURCE-DRAIN VOLTAGE : V
GS
0.1
Ta=125°C
resultant waveforms)
=0V
(See Figures 16 and 17 for
the measurement circuit and
Switching characteristics
0.01
Single pulse
DRAIN CURRENT : I
−25°C
vs. Source-Drain Voltage ( Ι )
0.2
75°C
25°C
100µ
0.5
0.5
PULSE WIDTH : PW
1m
1
t
t
t
d(off)
t
d(on)
f
r
1.0
2
D
(A)
Ta=25°C
V
V
R
Pulsed
10m
DD
GS
G
=10Ω
SD
=30V
=10V
5
(V)
(s)
1.5
10
Tc=25°C
θ
θ
100m
th(ch-c)
th(ch-c)
PW
(t)=r (t)
=6.25°C/W
0.05
0.02
0.01
T
1000
0.5
0.2
0.1
500
100
50
10
5
2
1
0.1
0
1
D= PW
Fig.11 Reverse Drain Current
θ
Ta=25°C
di/dt=50A/µs
V
Pulsed
Fig.14 Reverse Recovery Time
th (ch-c)
GS
REVERSE DRAIN CURRENT : I
SOURCE-DRAIN VOLTAGE : V
T
=0V
0.2
V
vs. Source-Drain Voltage ( ΙΙ )
GS
10
vs. Reverse Drain Current
=10V
0.5
0.5
1
0V
1.0
2
T a =25°C
Pulsed
SD
DR
(V)
5
(A)
1.5
1
0
10000
5000
2000
1000
500
200
100
50
20
10
0.1 0.2
Fig.12 Typical Capacitance
DRAIN-SOURCE VOLTAGE : V
0.5
vs. Drain-Source Voltage
1
Rev.A
2
5
2SK2503
10 20
Ta = 25°C
V
Pulsed
f = 1MHz
GS
DS
= 0V
(V)
50 100
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