2SK2601_10 TOSHIBA [Toshiba Semiconductor], 2SK2601_10 Datasheet

2SK2601_10

Manufacturer Part Number

2SK2601_10

Description

DC−DC Converter, Relay Drive and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK2601_10.pdf (6 pages)

Current page: 1 of 6
Download datasheet (426Kb)

DC−DC Converter, Relay Drive and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON-resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

= 90 V, T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Pulse (Note 1)

= 20 kΩ)

: I

: V

= 25°C (initial), L = 4.59 mH, R

(Note 1)

(Note 2)

DSS

= 2.0 to 4.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

stg

Symbol

DS (ON)

th (ch−c)

th (ch−a)

2SK2601

| = 7.0 S (typ.)

= 0.56 Ω (typ.)

−55 to 150

= 10 V, I

Rating

12.5

500

±30

125

270

150

= 500 V)

Max

1.0

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 10 A

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

2-16C1B

SC-65

2010-01-29

―

2SK2601

Unit: mm

Related parts for 2SK2601_10

2SK2601_10 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V = 2.0 to 4.0 V ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time ...

Page 3

3 2SK2601 2010-01-29 ...

Page 4

4 2SK2601 2010-01-29 ...

Page 5

Ω 4. 2SK2601 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − ⎝ ⎠ VDSS DD ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

Related keywords

2SK2601_10 datasheet
2SK2601_10 data sheet
2SK2601_10 pdf datasheet
2SK2601_10 component
2SK2601_10 part
2SK2601_10 distributor
2SK2601_10 RoHS
2SK2601_10 datasheet download