2SK2641-01_01 FUJI [Fuji Electric], 2SK2641-01_01 Datasheet
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Manufacturer Part Number
2SK2641-01_01
Description
N-CHANNEL SILICON POWER MOSFET
Manufacturer
FUJI [Fuji Electric]
2SK2641-01
N-CHANNEL SILICON POWER MOSFET
FAP-2S Series
Item
Thermalcharacteristics
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Item
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Electrical characteristics (T
off
on
c
=25°C unless otherwise specified)
Symbol
V
I
I
I
E
P
T
T
V
D
D(puls]
AR *2
D
ch
stg
AS *1
DS
GS
R
R
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
I
V
t
Q
I
th(ch-c)
th(ch-a)
GSS
AV
f
DSS
r
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
(on)
(off)
rr
*1 L=4.20mH, Vcc=50V
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
V
V
R
Test Conditions
I
I
V
V
V
V
f=1MHz
L=100 µ H T
I
I
-di/dt=100A/µs
V
I
I
channel to ambient
D
D
F
F
D
D
channel to case
CC
GS
GS
+150
DS
GS
GS
DS
GS
=2xI
=I
=1mA
=1mA
=5A
=5A
500
±10
±40
±35
229
100
DR
=0V
=300V I
=10V
=10
10
=500V
=±35V
=25V
=0V
DR
V
V
V
GS
V
GS
DS
GS
=0V
V
V
ch
V
D
=10V
=25V
*2 Tch=150°C
DS
DS
GS
=25°C
=10A
=0V T
=0V
=V
=0V
T
ch
GS
<
Unit
=25°C
°C
°C
mJ
W
ch
V
A
A
V
A
=25°C
T
T
ch
ch
=25°C
=125°C
TO-3P
Outline Drawings
FUJI POWER MOSFET
Equivalent circuit schematic
Min.
Min.
Gate(G)
500
10
3.5
2.5
Typ.
Typ.
950
180
450
10
10
80
25
70
70
45
4.0
0.2
0.73
5.0
1.1
5.5
Source(S)
Drain(D)
1450
Max.
Max.
35.0
500
100
270
120
110
110
1.25
40
70
4.5
1.0
0.90
1.65
Units
Units
°C/W
°C/W
ns
V
V
µA
mA
nA
S
pF
A
V
ns
µC
1
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2SK2641-01_01 Summary of contents
... N-CHANNEL SILICON POWER MOSFET FAP-2S Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ...
... Characteristics Power Dissipation PD=f(Tc) 120 100 Typical output characteristics ID=f(VDS):80µs Pulse test,Tch=25° VDS [V] Typical forward transconductance gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25° [A] Safe operating area ID=f(VDS):D=0.01,Tc=25° ...
... Drain-source on-state resistance RDS(on)=f(Tch):ID=5A,VGS=10V 3.0 2.5 2.0 max. 1.5 1.0 0.5 0.0 - Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=10A,Tch=25°C 400 Vcc=400V 350 300 250 250V 200 150 100V 100 [nC] Forward characteristic of reverse of diode IF=f(VSD):80µs Pulse test,VGS= ...
... Transient thermal impedande Zthch=f(t) parameter:D=t D=0.5 0.2 0.1 -1 0.05 10 0.02 0. [s] FUJI POWER MOSFET ...
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